FDMA410NZ datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Max RDS(on) = 23 mW at VGS = 4.5 V, ID = 9.5 A
* Max RDS(on) = 29 mW at VGS = 2.5 V, ID = 8.0 A
* Max RDS(on) = 36 mW at VGS = 1.8 V, ID = 4.0 A
* Max R.

Application

* Li−lon Battery Pack
* Baseband Switch
* Load Switch
* DC−DC Conversion ABSOLUTE MAXIMUM RATINGS (TA =.

Description

This Single N−Channel MOSFET has been designed using onsemi’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETt leadframe. Features
* Max RDS(on) = 23 mW at VGS = 4.5 V, ID = 9.5 A
* Max RDS(on) = 29 mW a.

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